Thin-film silicon detectors for particle detection
نویسندگان
چکیده
منابع مشابه
Thin-film silicon detectors for particle detection
Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes w...
متن کاملSilicon for thin-film transistors
We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are...
متن کاملPolyaniline thin film-porous silicon sensors for detection of microorganisms
Quick and simple methods to detect the type of life threatening microbial species are very essenti al in food and water contaminated with bacteria. Recently, by utili zi ng the semiconducting polymeric thin films prepared on si licon macroporous substrates a new technology for detection of micro-organisms has been developed. The advantages of the polymeric devices are the ease of fabrication , ...
متن کاملReSi2 thin-film infrared detectors
Two types of thin-film infrared-sensing devices have been investigated using the narrow band-gap semiconductor, rhenium disilicide ~Eg;0.1 eV!. These are the ReSi2/n-Si heterojunction internal photoemission ~HIP! detector and the ReSi2 thin-film photoconductor. The HIP device was found to be rectifying and to obey a Fowler-type law with a long-wavelength cutoff of ;2.1 mm ~0.59 eV! at room temp...
متن کاملThin-film Silicon Solar Cells
The simplest semiconductor junction that is used in solar cells for separating photogenerated charge carriers is the p-n junction, an interface between the p-type region and ntype region of one semiconductor. Therefore, the basic semiconductor property of a material, the possibility to vary its conductivity by doping, has to be demonstrated first before the material can be considered as a suita...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: physica status solidi (c)
سال: 2004
ISSN: 1610-1634
DOI: 10.1002/pssc.200304329